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参数资料
| 型号： | 2SK1070B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | MPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SK1070B |
2SK1070
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
–22
V
Gate to source voltage
V
GSO
–22
V
Drain current
I
D
50
mA
Gate current
I
G
10
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate cutoff current
I
GSS
—
–10
nA
V
GS = –15 V, VDS = 0
Gate to source breakdown
voltage
V
(BR)GSS
–22
—
V
I
G = –10 A, VDS = 0
Drain current
I
DSS*
1
6
—
40
mA
V
DS = 5 V, VGS = 0, Pulse test
Gate to source cutoff voltage
V
GS(off)
0
—
–2.5
V
DS = 5 V, ID = 10 A
Forward transfer admittance
fs
y
20
30
—
mS
V
DS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
—
9
—
pF
V
DS = 5 V, VGS = 0, f = 1 MHz
Note:
1. The 2SK1070 is grouped by I
DSS as follows.
Grade
B
C
D
E
Mark
PIB
PIC
PID
PIE
I
DSS
6 to 14
12 to 22
18 to 30
27 to 40
See characteristic curves of 2SK435.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1070-E | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK1070D | SMALL SIGNAL, FET |
| 2SK1070E | SMALL SIGNAL, FET |
| 2SK1070B | SMALL SIGNAL, FET |
| 2SK1079 | 0.6 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1070C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | SOT-346 |
| 2SK1070D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 18MA I(DSS) | SOT-346 |
| 2SK1070E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 27MA I(DSS) | SOT-346 |
| 2SK1070PIC(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans JFET N-CH 50mA 3-Pin MPAK T/R |
| 2SK1070PICTL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans JFET N-CH 50mA Si 3-Pin MPAK T/R Cut Tape |
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