参数资料
型号: 2SK1070E
元件分类: 小信号晶体管
英文描述: SMALL SIGNAL, FET
封装: MPAK-3
文件页数: 2/5页
文件大小: 23K
代理商: 2SK1070E
2SK1070
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
–22
V
Gate to source voltage
V
GSO
–22
V
Drain current
I
D
50
mA
Gate current
I
G
10
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate cutoff current
I
GSS
–10
nA
V
GS = –15 V, VDS = 0
Gate to source breakdown
voltage
V
(BR)GSS
–22
V
I
G = –10 A, VDS = 0
Drain current
I
DSS*
1
6
40
mA
V
DS = 5 V, VGS = 0, Pulse test
Gate to source cutoff voltage
V
GS(off)
0
–2.5
V
DS = 5 V, ID = 10 A
Forward transfer admittance
fs
y
20
30
mS
V
DS = 5 V, VGS = 0, f = 1 kHz
Input capacitance
Ciss
9
pF
V
DS = 5 V, VGS = 0, f = 1 MHz
Note:
1. The 2SK1070 is grouped by I
DSS as follows.
Grade
B
C
D
E
Mark
PIB
PIC
PID
PIE
I
DSS
6 to 14
12 to 22
18 to 30
27 to 40
See characteristic curves of 2SK435.
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