1
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
150
Continuous drain current
ID
9
Pulsed drain current
ID(puls]
36
Continuous reverse drain current
IDR
9
Gate-source peak voltage
VGS
±20
Max. power dissipation
PD
35
Operating and storage
Tch
+150
temperature range
Tstg
2SK1088-MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
V
A
V
W
°C
-55 to +150
JEDEC
EIAJ
SC-67
Outline Drawings
F- III SERIES
Features
High current
Low on-resistance
No secondary breakdown
Low driving power
High forward transconductance
Applications
Motor controllers
General purpose power amplifier
DC-DC converters
TO-220F15
3. Source
2.54
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
Min.
Typ.
Max.
Units
V
A
mA
nA
S
pF
ns
V
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-a)
channel to ambient
Rth(ch-c)
channel to case
62.5
3.57
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Diode forward on-voltage
Reverse recovery time
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=150V
VGS=0V
Tch=25°C
Tch=125°C
VGS=±20V VDS=0V
ID=4.5A VGS=4V
ID=4.5A VGS=10V
ID=4.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V RG=25
ID=9A
VGS=10V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR di/dt=100A/
s Tch=25°C
150
1.0
1.5
2.5
10
500
0.2
1.0
10
100
0.26
0.40
0.20
0.30
5.0
10.0
900
1200
150
230
40
60
10
15
40
60
150
230
30
45
1.10
1.5
100