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参数资料
| 型号： | 2SK1109J37 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 45K |
| 代理商： | 2SK1109J37 |
Data Sheet D15940EJ1V0DS
3
2SK1109
TYPICAL CHARACTERISTICS (TA = 25°C)
20
40
60
80
100
120 140
160
0
40
20
80
60
100
DERATING FACTOR OF
POWER DISSIPATION
TA - Ambient Temperature - C
dT
-
Derating
Factor
-
%
VGS - Gate to Source Voltage - V
IG
-
Gate
Current
-
A
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
20
10
40
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
mA
0.6
0.4
0.2
0
+0.2
0.2
0.6
0.4
0.8
1.0
VDS = 5 V
ID
S
=
3
0
A
ID
S
=
2
0
A
ID
S
=
1
0
A
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
20
50
100
VDS - Drain to Source Voltage - V
C
iSS
-
Input
Capacitance
-
pF
10
20
50
100
1
2
5
15
2
VDS = 0 V
f = 1.0 MHz
GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD
TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE
DRAIN CURRENT CO-RELATION
Zero-Gate Voltage Drain Current - A
V
GS
(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
|y
fs
|-
Forward
Transfer
Admittance
-
S
VDS = 5 V
1.0
0.5
0.2
0.1
0.05
0.02
10.0
20
50
100
200
500
1000
0.01
5.0
2.0
10
VGS (off)
|yfs|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1112 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251VAR |
| 2SK1113 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:2SK1113 |
| 2SK1117 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK1117 |
| 2SK1118 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1119 | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 1KV 4A 3-Pin(3+Tab) TO-220 |
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