参数资料
型号: 2SK1155-E
元件分类: JFETs
英文描述: 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: SC-46, 3 PIN
文件页数: 3/7页
文件大小: 83K
代理商: 2SK1155-E
2SK1155, 2SK1156
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
50
10
1.0
0.05
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
20
2
0.2
1
3
30
300
Ta = 25
°C
2SK1156
2SK1155
10
s
100
s
1 ms
DC
Operation
(T
C =
25
°C)
PW
=
10
m
s (1
shot)
Operation
in
this
Area
is Limited
by
R DS
(on)
5
0.5
0.1
10
20
50
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
8
2
10
30
40
0
4
6
5.0 V
4.5 V
VGS = 4 V
5.5 V
6 V
10 V
Pulse Test
10
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
8
2
26
8
–25
°C
0
4
6
VDS = 20 V
Pulse Test
75
°C
TC = 25°C
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
ID = 1 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
Pulse Test
5 A
10
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
5
0.1
1.0
5
20
0.5
1.0
2
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 10 V
Pulse Test
0.2
10
15 V
0.5
相关PDF资料
PDF描述
2SK1156 1.5 ohm, POWER, FET, TO-220AB
2SK1162-E 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
2SK1156 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1156(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1156-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1157 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1157(E) 制造商:Renesas Electronics Corporation 功能描述: