参数资料
型号: 2SK1161
元件分类: JFETs
英文描述: 0.8 ohm, POWER, FET
封装: TO-3P, 3 PIN
文件页数: 2/6页
文件大小: 32K
代理商: 2SK1161
2SK1161, 2SK1162
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
2SK1161
V
DSS
450
V
2SK1162
500
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)*
1
30
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at T
C =
25°C
相关PDF资料
PDF描述
2SK1168-E 15 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1167-E 15 A, 450 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK118-O N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK118-Y N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK118-R N-CHANNEL, Si, SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
2SK1161(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1161-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1162 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 10A 3PIN TO-3P - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1162-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-3P