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参数资料
| 型号： | 2SK117-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | 2-5F1D, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 150K |
| 代理商： | 2SK117-GR |
2SK117
2003-03-25
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VGD = -10 V, ID = 0, f = 1 MHz
3
pF
NF (1)
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 10 Hz
5
10
Noise figure
NF (2)
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 1 kHz
1
2
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK118 | 6.5 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK118-GR | 6.5 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK118-Y | 3 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK1223 | 50 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1239 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK117-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH Si 3-Pin TO-92 Bulk |
| 2SK117GRTPE2F | 功能描述:JFET Low Noise Audio Amp 1.0dB -30V VGS RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| 2SK117Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-92 |
| 2SK117-Y(F) | 制造商:Toshiba 功能描述:Nch -50V 14mA TO92 Bulk |
| 2SK118 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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