参数资料
型号: 2SK1301-E
元件分类: JFETs
英文描述: 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: SC-46, 3 PIN
文件页数: 3/7页
文件大小: 82K
代理商: 2SK1301-E
2SK1301
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
50
100
0
Case Temperature TC (°C)
150
20
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
40
60
Maximum Safe Operation Area
Drain
Current
I
D
(A)
300
100
30
3
100
10
0.3
1
30
0.1
Drain to Source Voltage VDS (V)
10
1000
3
1
100
s
1 ms
Ta = 25
°C
10
s
DC
Operati
on
(T
C =
25
°C)
PW
=
10
ms
(1
Shot)
Operation in this area
is limited by RDS (on)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
20
16
12
8
4
20
16
12
8
4
0
VGS = 2.5 V
Pulse Test
7 V
3 V
3.5 V
10 V
2.5 V
7 V
4 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
4
2
1
05
4
8
12
16
20
0
Drain
Current
I
D
(A)
VDS = 10 V
Pulse Test
–25
°C
TC = 25°C
75
°C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
1.0
1.5
2.0
2.5
0
0.5
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
ID = 5 A
10 A
20 A
10
Drain Current ID (A)
20
5
2
100
0.02
0.05
0.1
0.2
0.5
1
0.01
0.005
50
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
VGS = 4 V
10 V
Pulse Test
相关PDF资料
PDF描述
2SK1301 0.18 ohm, POWER, FET, TO-220AB
2SK1301 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1307-E 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1307 0.12 ohm, POWER, FET
2SK1308A 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK1302 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220AB
2SK1302-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1303 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK1303(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1303-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET