参数资料
型号: 2SK1301
元件分类: JFETs
英文描述: 0.18 ohm, POWER, FET, TO-220AB
文件页数: 3/9页
文件大小: 46K
代理商: 2SK1301
2SK1301
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
250
A
V
DS = 80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
0.10
0.13
I
D = 8 A, VGS = 10 V *
1
0.13
0.18
I
D = 8 A, VGS = 4 V *
1
Forward transfer admittance
|yfs|
7
11
S
I
D = 8 A, VDS = 10 V *
1
Input capacitance
Ciss
860
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
340
pF
f = 1 MHz
Reverse transfer capacitance
Crss
100
pF
Turn-on delay time
t
d(on)
10
ns
I
D = 8 A, VGS = 10 V,
Rise time
t
r
70
ns
R
L = 3.75
Turn-off delay time
t
d(off)
180
ns
Fall time
t
f
100
ns
Body to drain diode forward
voltage
V
DF
1.3
V
I
F = 15 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
250
ns
I
F = 15 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
相关PDF资料
PDF描述
2SK1301 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1307-E 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1307 0.12 ohm, POWER, FET
2SK1308A 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1308 5 A, 400 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK1301(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1301-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1302 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220AB
2SK1302-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1303 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET