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参数资料
| 型号： | 2SK1315(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.7 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 39K |
| 代理商： | 2SK1315(L) |
2SK1315(L)(S), 2SK1316(L)(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1315 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1316
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1315 I
DSS
—
250
A
V
DS = 360 V, VGS = 0
drain current
2SK1316
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1315 R
DS(on)
—
0.55
0.7
I
D = 4 A, VGS = 10 V *
1
on state resistance
2SK1316
—
0.60
0.8
Forward transfer admittance
|yfs|
4.5
7.5
—
S
I
D = 4 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1150
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
340
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
55
—
pF
Turn-on delay time
t
d(on)
—
17
—
ns
I
D = 4 A, VGS = 10 V,
Rise time
t
r
—
55
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—
100
—
ns
Fall time
t
f
—45
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
350
—
ns
I
F = 8 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
See characteristic curves of 2SK1159, 2SK1160.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1315(S) | 0.7 ohm, POWER, FET |
| 2SK1316(S) | 0.8 ohm, POWER, FET |
| 2SK1315(L) | 0.7 ohm, POWER, FET |
| 2SK1315(S) | 0.7 ohm, POWER, FET |
| 2SK1317 | 2.5 A, 1500 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1315S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1316 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1316(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-251VAR |
| 2SK1316L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1316L-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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