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参数资料
| 型号： | 2SK1316(S) |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET |
| 封装： | LDPAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 39K |
| 代理商： | 2SK1316(S) |
2SK1315(L)(S), 2SK1316(L)(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1315 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1316
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1315 I
DSS
—
250
A
V
DS = 360 V, VGS = 0
drain current
2SK1316
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1315 R
DS(on)
—
0.55
0.7
I
D = 4 A, VGS = 10 V *
1
on state resistance
2SK1316
—
0.60
0.8
Forward transfer admittance
|yfs|
4.5
7.5
—
S
I
D = 4 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1150
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
340
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
55
—
pF
Turn-on delay time
t
d(on)
—
17
—
ns
I
D = 4 A, VGS = 10 V,
Rise time
t
r
—
55
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—
100
—
ns
Fall time
t
f
—45
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
350
—
ns
I
F = 8 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
See characteristic curves of 2SK1159, 2SK1160.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1316STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1316STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) LDPAK(S)-(1) T/R |
| 2SK1317 | 制造商:Renesas Electronics Corporation 功能描述:MOSFET N TO-3P |
| 2SK1317-01-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:2SK1317-01-E - Rail/Tube |
| 2SK1317E | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P |
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