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参数资料
| 型号： | 2SK1317 |
| 元件分类： | JFETs |
| 英文描述： | 2.5 A, 1500 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 63K |
| 代理商： | 2SK1317 |
2SK1317
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
1500
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
2.5
A
Drain peak current
I
D(pulse)*
1
7A
Body to drain diode reverse drain current
I
DR
2.5
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at T
C =
25
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
1500
—
V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±1
AV
GS = ±20 V, VDS = 0
Zero gate voltage drain current I
DSS
—
500
AV
DS = 1200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
4.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—9
12
I
D = 2 A, VGS = 15 V *
1
Forward transfer admittance
|yfs|
0.45
0.75
—
S
I
D = 1 A, VDS = 20 V *
1
Input capacitance
Ciss
—
990
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
125
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
60
—
pF
Turn-on delay time
t
d(on)
—
17
—
ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
—
70
—
ns
R
L = 15
Turn-off delay time
t
d(off)
—
110
—
ns
Fall time
t
f
—60
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 2 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
1750
—
ns
I
F = 2 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1317 | 2.5 A, 1500 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1332-3 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK1332-2 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK1338 | 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1338 | 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1317-01-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:2SK1317-01-E - Rail/Tube |
| 2SK1317E | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P |
| 2SK1317-E | 制造商:Renesas Electronics Corporation 功能描述:2SK1317-E - Rail/Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P Tray 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 1500V 2.5A TO-3P 制造商:Renesas Electronics Corporation 功能描述:MOSFET N TO-3P 制造商:Renesas Electronics Corporation 功能描述:MOSFET, N, TO-3P 制造商:Renesas Electronics Corporation 功能描述:N CHANNEL MOSFET, 1.5KV, 2.5A TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):12ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,1500V,2.5A,9ohm,TO-3P |
| 2SK1318 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK1318-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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