参数资料
型号: 2SK1382
元件分类: JFETs
英文描述: 60 A, 100 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-21F1B, 3 PIN
文件页数: 1/6页
文件大小: 392K
代理商: 2SK1382
2SK1382
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSIII)
2SK1382
Relay Drive, Motor Drive and DCDC Converter
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 15 m (typ.)
High forward transfer admittance
: |Yfs| = 47 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 100 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
60
Drain current
Pulse (Note 1)
IDP
240
A
Drain power dissipation (Tc = 25°C)
PD
200
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.625
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
相关PDF资料
PDF描述
2SK1391 6 A, 250 V, 0.84 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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