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参数资料
| 型号： | 2SK1399 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC, SC-59, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 240K |
| 代理商： | 2SK1399 |
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MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D14770EJ3V0DS00 (3rd edition)
Date Published June 2005 NS CP(K)
Printed in Japan
1991, 2000
The mark
shows major revised points.
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET can be
driven by 2.5 V power supply.
The 2SK1399 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances including
VCR cameras and headphone stereos which need power saving.
FEATURES
Can be driven by a 3.0 V power source
Not necessary to consider driving current because of its high input
impedance
Possible to reduce the number of parts by omitting the bias resistor
Can be used complementary with the 2SJ185
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1399
SC-59 (Mini Mold)
Marking: G12
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
50
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC)
ID(DC)
±100
mA
Drain Current (pulse)
Note
ID(pulse)
±200
mA
Total Power Dissipation (TC = 25°C)
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9
±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1. Source
2. Gate
3. Drain
1
2
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1400A | 7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1400 | 7 A, 300 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1403A-E | 8 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1403A | 8 A, 650 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1403 | 8 A, 600 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1399-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1399-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R Tape & Reel |
| 2SK1400 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 300V 7A 3PIN TO-220AB - Rail/Tube |
| 2SK1400A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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