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参数资料
| 型号： | 2SK1399 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC, SC-59, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 46K |
| 代理商： | 2SK1399 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1991, 2000
MOS FIELD EFFECT TRANSISTOR
2SK1399
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D14770EJ2V0DS00 (2nd edition)
(Previous No.TC-2343)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 2SK1399 is an N-channel vertical type MOS FET which can be
driven by 2.5-V power supply.
The 2SK1399 is driven by low voltage and does not require consideration
of driving current, it is suitable for appliances including VCR cameras and
headphone stereos which need power saving.
FEATURES
Can be driven by a 3.0-V power source
Not necessary to consider driving current because of it is high input
impedance
Possible to reduce the number of parts by omitting the bias resistor
Can be used complementary with the 2SJ185
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1399
SC-59 (Mini Mold)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
50
V
Gate to Source Voltage
VGSS
±7.0
V
Drain Current (DC)
ID(DC)
±100
mA
Drain Current (pulse)
Note
ID(pulse)
±200
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Operating Temperature
Topt
–55 to +80
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50 %
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
PACKAGE DRAWING (Unit : mm)
2.8 ± 0.2
1.5
0.65
0.95
0.3
0.95
2.9
±
0.2
1.1
to
1.4
0
to
0.1
0.16
+0.1 –0.06
2
1
3
+0.1 –0.05
0.4
+0.1 –0.05
0.4
Marking
+0.1
–0.15
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Marking: G12
Gate
Drain
Electrode
Connection
1.Source
2.Gate
3.Drain
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1402-E | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1435 | 30 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML |
| 2SK1468TP-FA | 4000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1468TP | 4000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1494 | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1399-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1399-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R Tape & Reel |
| 2SK1400 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 300V 7A 3PIN TO-220AB - Rail/Tube |
| 2SK1400A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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