参数资料
型号: 2SK1406
厂商: PANASONIC CORP
元件分类: JFETs
英文描述: 20 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TOP3, FULL PACK-3
文件页数: 1/3页
文件大小: 164K
代理商: 2SK1406
1
Power F-MOS FETs
unit: mm
2SK1406
Silicon N-Channel Power F-MOS FET
s Features
q Low ON-resistance R
DS(on): RDS(on) = 0.32 (typ.)
q High-speed switching: t
f = 140ns (typ.)
q No secondary breakdown
q High breakdown voltage, large allowable power dissipation
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Ratings
500
±20
±40
100
3
150
55 to +150
Unit
V
A
W
°C
s Electrical Characteristics (T
C = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Drain to Source ON-voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
VDS(on)
| Yfs |
Ciss
Coss
Crss
ton
tf
td(off)
Conditions
VDS = 400V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 10A
VGS = 10V, ID = 20A
VDS = 25V, ID = 10A
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 10A
VDS = 150V, RL = 15
min
500
1
7.2
typ
0.32
12
3000
430
175
150
140
480
max
0.1
±1
5
0.4
9
Unit
mA
A
V
V
S
pF
ns
1: Gate
2: Drain
3: Source
TOP-3 Full Pack Package (a)
15.0±0.3
21.0±0.5
16.2±0.5
12.5
Solder
Dip
3.5
0.7
15.0±0.2
5.0±0.2
11.0±0.2
10.9±0.5
5.45±0.3
3
2
1
1.1±0.1
2.0±0.2
0.6±0.2
2.0±0.1
φ3.2±0.1
3.2
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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