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参数资料
| 型号： | 2SK1412LS |
| 元件分类： | JFETs |
| 英文描述： | 0.1 A, 1500 V, 200 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
| 封装： | TO-220FI(LS), 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 36K |
| 代理商： | 2SK1412LS |
2SK1412LS
No.4228-1/4
Features
Low ON-resistance, low input capacitance.
Ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1500
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
0.1
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
0.2
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
1500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
3.5
V
Forward Transfer Admittance
yfs
VDS=20V, ID=50mA
50
100
mS
Static Drain-to-Source On-State Resistance
RDS(on)
ID=50mA, VGS=10V
140
200
Input Capacitance
Ciss
VDS=20V, f=1MHz
40
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
12
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
3.0
pF
Marking : K1412
Continued on next page.
(Note) Be careful in handling the 2SK1412LS because it has no protection diode between gate and source.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN4228C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
82506QB MS IM TC-00000089 / N1501 TS IM TA-3431 / 51099TH (KT) / 41293TH (KOTO) AX-9637
SANYO Semiconductors
DATA SHEET
2SK1412LS
N-Channel Silicon MOSFET
High-Voltage, High-Speed Switching
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1413 | 2 A, 1500 V, 11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML |
| 2SK1444LS | 3 A, 450 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
| 2SK1445LS | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FI |
| 2SK1465 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PBL |
| 2SK1485 | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1413 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML |
| 2SK1413 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML |
| 2SK1414 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Voltage High-Speed Switching Applications |
| 2SK1416 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SK1417 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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