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参数资料
| 型号： | 2SK1482-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 82K |
| 代理商： | 2SK1482-AZ |
1991, 2001
MOS FIELD EFFECT TRANSISTOR
2SK1482
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
Document No.
D15670EJ2V0DS00 (2nd edition)
(Previous No. TC-2344)
Date Published
July 2001 NS CP(K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
2.54
123
12.7
MAX.
5.5
MAX.
5.2 MAX.
4.2
MAX.
1.77
MAX.
1.27
0.5
DESCRIPTION
The 2SK1482 is N-channel vertical type MOS FET switching device which
can be directly driven from an IC operating with a 5 V single power supply.
The device featuring low on-state resistance is of the voltage drive type and
thus is ideal for driving actuators such as motors, solenoids, and relays.
FEATURES
Low on-state resistance
RDS(on)1 = 0.8
MAX. (VGS = 4 V, ID = 0.5 A)
RDS(on)2 = 0.4
MAX. (VGS = 10 V, ID = 0.5 A)
Voltage drive at logic level (VGS = 4 V) is possible.
Bidirectional zener diode for protection is incorporated in
between the gate and the source.
Inductive loads can be driven without protective circuit thanks
to the improved breakdown voltage between the drain and source.
Can be used complementary with the 2SJ196.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±1.5
A
Drain Current (pulse)
Note
ID(pulse)
±3.0
A
Total Power Dissipation (TA = 25°C)
PT
750
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1518-E | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1522-E | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1525 | 20 A, 500 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1538 | 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1540S | 7 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1483 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK1483-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1483-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SK1484 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1485 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
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