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参数资料
| 型号： | 2SK1526 |
| 文件页数： | 6/9页 |
| 文件大小： | 47K |
| 代理商： | 2SK1526 |
2SK1515, 2SK1516
6
5,000
0.5
10
Reverse Drain Current IDR (A)
2,000
100
15
0.2
500
1,000
50
2
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
200
20
1,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
100
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
5,000
5
10
500
16
40
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
824
32
200
300
20
16
4
0
8
12
Gate
to
Source
Voltage
V
GS
(V)
0
VGS
VDS
VDD = 400 V
250 V
100 V
ID = 7 A
Gate Charge Qg (nc)
250 V
400 V
VDD = 100 V
500
Drain Current ID (A)
Switching
Time
t
(ns)
200
5
50
100
10
Switching Characteristics
td (off)
0.5
0.2
1
tf
tr
td (on)
20
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
210
520
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1527 | |
| 2SK1528(L) | |
| 2SK1528(S) | |
| 2SK1540(L)(S) | |
| 2SK1541(L)(S) | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1526-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1527 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 40A 3-Pin(3+Tab) TO-3PL |
| 2SK1527-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1528 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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