参数资料
型号: 2SK1530-Y
元件分类: JFETs
英文描述: 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET
封装: 2-21F1B, 3 PIN
文件页数: 1/4页
文件大小: 236K
代理商: 2SK1530-Y
2SK1530
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
High-Power Amplifier Application
High breakdown voltage
: VDSS = 200V
High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
Complementary to 2SJ201
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
200
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
12
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Channel temperature
Tc
150
°C
Storage temperature range
Tstg
55~150
°C
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0
1.0
mA
Gate leakage current
IGSS
VDS = 0V, VGS = ±20 V
±0.5
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
200
V
Drainsource saturation voltage
VDS (ON)
ID = 8 A, VGS = 10 V
2.5
5.0
V
Gatesource cutoff voltage (Note 2)
VGS (OFF)
VDS = 10 V, ID = 0.1 A
0.8
2.8
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
5.0
S
Input capacitance
Ciss
VDS = 30 V, VGS = 0, f = 1 MHz
900
Output capacitance
Coss
VDS = 30 V, VGS = 0, f = 1 MHz
180
Reverse transfer capacitance
Crss
VDD = 30 V, VGS = 0, f = 1 MHz
100
pF
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VGS (OFF) Classification
0: 0.8~1.6
Y: 1.4~2.8
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
2SK1530
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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