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参数资料
| 型号： | 2SK1530O |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-21F1B, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 382K |
| 代理商： | 2SK1530O |
2SK1530
2009-12-21
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530
High-Power Amplifier Application
High breakdown voltage
: VDSS = 200 V
High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
Complementary to 2SJ201
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
200
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
12
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0
—
1.0
mA
Gate leakage current
IGSS
VDS = 0V, VGS = ±20 V
—
±0.5
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
200
—
V
Drainsource saturation voltage
VDS (ON)
ID = 8 A, VGS = 10 V
—
2.5
5.0
V
Gatesource cutoff voltage (Note 3)
VGS (OFF)
VDS = 10 V, ID = 0.1 A
0.8
—
2.8
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
—
5.0
—
S
Input capacitance
Ciss
VDS = 30 V, VGS = 0, f = 1 MHz
—
900
—
Output capacitance
Coss
VDS = 30 V, VGS = 0, f = 1 MHz
—
180
—
Reverse transfer capacitance
Crss
VDS = 30 V, VGS = 0, f = 1 MHz
—
100
—
pF
Note 3: VGS (OFF) Classification
0: 0.8 to 1.6 Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
2SK1530
TOSHIBA
JAPAN
Lot No.
Note 2
Part No. (or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of
the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1530Y | 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1572-E | 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1573-E | 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1580 | 100 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1530Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 12A I(D) | TO-247VAR |
| 2SK1530-Y | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
| 2SK1530-Y(F) | 功能描述:MOSFET MOSFET N-CH 200V 12A TO-3PL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK1530-YF | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
| 2SK1531 | 制造商:Toshiba 功能描述:Cut Tape 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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