参数资料
型号: 2SK1581
元件分类: 小信号晶体管
英文描述: 200 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MINIMOLD, SC-59, 3 PIN
文件页数: 1/5页
文件大小: 405K
代理商: 2SK1581
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK1581
SWITCHING
N-CHANNEL MOS FET
DATA SHEET
Document No. D13556EJ4V0DS00 (4th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
1990
The mark
shows major revised points.
DESCRIPTION
The 2SK1581, N-channel vertical type MOS FET, can be
driven by 2.5 V power supply.
As the 2SK1581 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances
including VCR cameras and headphone stereos which need
power saving.
FEATURES
Directly driven by ICs having a 3 V power supply.
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1581
SC-59 (Mini Mold)
Marking: G14
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±16
V
Drain Current (DC)
ID(DC)
±200
mA
Drain Current (pulse)
Note
ID(pulse)
±400
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9
±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1. Source
2. Gate
3. Drain
1
2
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料
PDF描述
2SK1581 200 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK1582-A 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK1583-T1 500 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK1583-T2 500 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK1585 1 A, 16 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK1581-A 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA
2SK1581-T1B-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 0.2A 3-Pin SC-59 T/R
2SK1582 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor
2SK1582-A 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA
2SK1582-T1B-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.2A 3-Pin SC-59