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参数资料
| 型号： | 2SK1582-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 5/8页 |
| 文件大小： | 238K |
| 代理商： | 2SK1582-A |
2SJ528(L),2SJ528(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.17
0.22
I
D = –4A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.24
0.37
I
D = –4A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
3.0
5.0
—
S
I
D = –4A, VDS = –10V
Note4
Input capacitance
Ciss
—
400
—
pF
V
DS = –10V
Output capacitance
Coss
—
220
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
75
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
V
GS = –10V, ID = –4A
Rise time
t
r
—
40
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—75
—
ns
Fall time
t
f
—65
—
ns
Body–drain diode forward voltage
V
DF
—
–1.1
—
V
I
F = –7A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
65
—
ns
I
F = –7A, VGS = 0
diF/ dt = 50A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1582-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.2A 3-Pin SC-59 |
| 2SK1583 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1583-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 0.5A 4-Pin(3+Tab) SC-62 T/R |
| 2SK1584 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK1584-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
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