- 您现在的位置：买卖IC网 > PDF目录49994 > 2SK1588 3 A, 16 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SK1588 |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 16 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | POWER, MINIMOLD, SC-62, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 713K |
| 代理商： | 2SK1588 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK1588
N-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. D17810EJ3V0DS00 (3rd edition)
(Previous No. TC-2352A)
Date Published November 2005 NS CP(K)
Printed in Japan
1991
DESCRIPTION
The 2SK1588 is an N-channel vertical type MOSFET which
can be driven by 2.5 V power supply.
As the MOSFET is driven by low voltage and does not
require consideration of driving current, it is suitable for
appliances including VCR cameras and headphone stereos
which need power saving.
FEATURES
Directly driven by ICs having a 3 V power supply.
Low on-state resistance
RDS(on)1 = 0.5
Ω MAX. (VGS = 2.5 V, ID = 1.0 A)
RDS(on)2 = 0.3
Ω MAX. (VGS = 4.0 V, ID = 1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1588
SC-62 (Power Mini Mold)
Marking: NG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±16
V
Drain Current (DC)
ID(DC)
±3.0
A
Drain Current (pulse)
Note1
ID(pulse)
±6.0
A
Total Power Dissipation
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic substrate of 16 cm
2 x 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.6 ±0.2
1.5 ±0.1
0.8
MIN.
2.5
±0.1
4.0
±0.25
3.0 TYP.
1.5 TYP.
4.5 ±0.1
0.41
+0.03
–0.05
0.47
±0.06
0.42
±0.06
0.42
±0.06
1. Source
2. Drain
3. Gate
13
2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1593-AZ | 500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1593-AZ | 500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1609 | 8 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK160A-LK24 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK160A-LK26 | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1588-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1588-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 3A 4-Pin(3+Tab) SC-62 |
| 2SK1589 | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1589-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1589-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 0.1A 3-Pin SC-59 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 0.1A 3-Pin SC-59 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
发布紧急采购，3分钟左右您将得到回复。