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参数资料
| 型号： | 2SK1609 |
| 厂商： | PANASONIC CORP |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 167K |
| 代理商： | 2SK1609 |
2
Power F-MOS FETs
ID VDS
| Yfs | ID
RDS(on) ID
ID VGS
Ciss, Coss, Crss VDS
ton, tf, td(off) ID
PD Ta
Area of safe operation (ASO)
EAS
T
j
2SK1609
0
1020304050
60
0
2
4
6
8
10
12
14
16
5V
4V
5.5V
6V
V
GS
=15V
10V
7V
P
D=50W
T
C=25C
Drain to source voltage V
DS
(V)
Drain
current
I
D
(A
)
012
10
8
26
4
0
8
6
2
5
7
4
1
3
V
DS=25V
T
C=25C
Drain current I
D
(A)
Forward
transfer
admittance
|Y
fs
|
(S
)
04
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
GS=10V
T
C=25C
Drain current I
D
(A)
Drain
to
source
ON-resistance
R
DS(on)
(
)
010
8
26
4
0
2
4
6
8
10
12
14
16
V
DS=25V
T
C=25C
Gate to source voltage V
GS
(V)
Drain
current
I
D
(A
)
0
50
100
150
200
250
1
10
100
1000
10000
3
30
300
3000
f=1MHz
T
C=25C
C
iss
C
oss
C
rss
Drain to source voltage V
DS
(V)
Input
capacitance
(Common
source
),Output
capacitance
(Common
source
),
Reverse
transfer
capacitance
(Common
source
)
C
iss
,C
oss
,C
rss
(pF
)
012
10
8
26
4
0
40
80
120
160
200
240
t
d(off)
t
f
t
on
V
DD=150V
V
GS=10V
T
C=25C
Drain current I
D
(A)
Switching
time
t
on
,t
f,t
d(off)
(ns
)
020
40
60
80 100 120 140 160
0
10
20
30
40
50
60
(1) T
C=Ta
(2) Without heat sink
(P
D=2W)
(1)
(2)
Ambient temperature Ta (C)
Allowable
power
dissipation
P
D
(W
)
1
10
100
1000
3
30
300
0.01
0.1
1
10
100
0.03
0.3
3
30
Non repetitive pulse
T
C=25C
I
DP
DC
10ms
I
D
t=1ms
Drain to source voltage V
DS
(V)
Drain
current
I
D
(A
)
25
50
75
100
125
150
175
0
40
80
120
160
200
240
I
D=8A
V
DD=50V
Junction temperature T
j
(C)
Avalanche
energy
capacity
EAS
(mJ
)
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相关代理商/技术参数 |
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|---|---|
| 2SK160A(T1B-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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