- 您现在的位置：买卖IC网 > PDF目录55796 > 2SK1612 (PANASONIC CORP) 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK1612 |
| 厂商： | PANASONIC CORP |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 167K |
| 代理商： | 2SK1612 |
1
Power F-MOS FETs
unit: mm
2SK1612
Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity
q V
GSS: 30V guaranteed
q Low R
DS(on), high-speed switching characteristic
s Applications
q High-speed switching (switching power supply)
q For high-frequency power amplification
s Absolute Maximum Ratings (T
C = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
TC = 25°C
Ta = 25°C
Symbol
VDSS
VGSS
ID
IDP
EAS*
PD
Tch
Tstg
Ratings
800
±30
±3
±6
20
50
2
150
55 to +150
Unit
V
A
mJ
W
°C
s Electrical Characteristics (T
C = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
IDSS
IGSS
VDSS
EAS*
Vth
RDS(on)
| Yfs |
Ciss
Coss
Crss
ton
tf
td(off)
Conditions
VDS = 720V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
L = 3.4mH, ID = 3A, VDD = 50V
VDS = 25V, ID = 1mA
VGS = 10V, ID = 2A
VDS = 25V, ID = 2A
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 2A
VDD = 200V, RL = 100
min
900
15
1
1.5
typ
3.8
2.2
730
90
40
35
105
max
0.1
±1
5
Unit
mA
A
V
mJ
V
S
pF
ns
*
Single pulse
*
Avalanche energy capacity test circuit
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
2
13
2.7±0.2
4.2±0.2
φ3.1±0.1
VDS
ID
L
Drain
Gate
Source
RGS
C
VDD
PVS
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1623STL-E | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1645-03 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 2SK1658-A | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1666 | 0.035 ohm, POWER, FET |
| 2SK1667-E | 7 A, 250 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK161-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK161-O(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK161-Y(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin 2-4E1D 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin 2-4E1D Bulk |
| 2SK1626-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 450V 5A 3-Pin(3+Tab) TO-220FM Box |
| 2SK1629(E) | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。