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参数资料
| 型号： | 2SK1623STL-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-83, LDPAK-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 89K |
| 代理商： | 2SK1623STL-E |
SILICON PNP TRANSISTOR
2N3963
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8779
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)CBO
Collector-Base
Breakdown Voltage
IC = -10A
-80
V
V(BR)CEO
Collector-Emitter
Breakdown Voltage
IC = -5mA
-80
V
V(BR)CES
Collector-Emitter
Breakdown Voltage
IC = -10A
-80
V
V(BR)EBO
Emitter - Base
Breakdown Voltage
IE = -10A
-6
V
ICBO
Collector Cut-Off Current
VCB = -70V
-10
ICES
Collector Cut-Off Current
VCE = -70V
-10
IEBO
Emitter Cut-Off Current
VEB = -4V
-10
nA
IC = -10A
VCE = -5V
100
300
-55°C
40
IC = -100A
VCE = -5V
100
IC = -1.0mA
VCE = -5V
100
450
100°C
600
IC = -50mA
(1)
VCE = -5V
90
hFE
DC Current Gain
-55°C
45
IC = -10mA
IB = -0.5mA
-0.25
VCE(sat)
(1)
Collector-Emitter
Saturation Voltage
IC = -50mA
IB = -5.0mA
-0.4
IC = -10mA
IB = -0.5mA
-0.9
VBE(sat)
(1)
Base-Emitter
Saturation Voltage
IC = -50mA
IB = -5.0mA
-0.95
V
DYNAMIC CHARACTERISTICS
IC = 1.0mA
VCE = -5.0V
hfe
Small-Signal Current Gain
f = 1.0KHz
100
550
IC = -0.5mA
VCE = -5.0V
|hfe|
Magnitude of Forward Current
Transfer Ratio,
Common-Emitter
f = 20MHz
2.0
8.0
Cobo
Output Capacitance
VCB = -5.0V
f = 1.0MHz
6
pF
Cibo
Input Capacitance
VEB = -0.5V
f = 1.0MHz
15
pF
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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