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参数资料
| 型号： | 2SK1647L |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 900 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/10页 |
| 文件大小： | 55K |
| 代理商： | 2SK1647L |
2SK1647(L), 2SK1647(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
900
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 720 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
—
5.0
7.0
I
D = 1 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
0.9
1.5
—
S
I
D = 1 A, VDS = 20 V *
1
Input capacitance
Ciss
—
425
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
175
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = 1 A, VGS = 10 V,
Rise time
t
r
—
35
—
ns
R
L = 30
Turn-off delay time
t
d(off)
—60
—
ns
Fall time
t
f
—50
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 2 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
700
—
ns
I
F = 2 A, VGS = 0,
di
F/dt = 100 A/s
Note
1. Pulse test
See characteristic curves of 2SK1338.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1647L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1647STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1656(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1657(T1B-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1657-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
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