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参数资料
| 型号： | 2SK1658-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/8页 |
| 文件大小： | 53K |
| 代理商： | 2SK1658-A |
Data Sheet D15638EJ2V0DS
3
2SK1658
TYPICAL CHARACTERISTICS (TA = 25°C)
20
60
80
40
0
100
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Der
ating
F
actor
-
%
TC - Case Temperature - C
0
20
40
60
80
100
120
140
160
120
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
T
otal
P
o
w
er
Dissipation
-m
W
TA - Ambient Temperature - C
30
60
90
120
150
180
0
150
120
60
180
90
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
-
Dr
ain
to
Source
On-state
Resistance
-
VGS - Gate to Source Voltage - V
0
2
4
6
8
101214
10
20
30
40
50
60
ID = 10 mA
Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 3 V
ID = 1 A
30
0
30
60
90
120
150
0
1
3
2
10
3
1
0.3
30
VDS = 3 V
Pulsed
100
ID - Drain Current - mA
|y
fs
|
-
Forward
Transfer
Admittance
-
mS
TA =
25C
1000
100
300
10
30
1
3
75C
25C
150C
DRAIN CURRENT
FORWARD TRANSFER ADMMITTANCE vs.
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
mA
VGS = 3 V
Pulsed
TA = 150C
75C
25C
0C
–25C
0
1
2
345
6
0.01
0.1
1
10
100
0.001
VGS - Gate to Source Voltage - V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1658-T1-A | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 25 SC70 Cut Tape |
| 2SK1667(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1668(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1670(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1671 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 250V 30A 3PIN TO-P - Rail/Tube 制造商:Distributed By MCM 功能描述:250V 30A 10W Gds Hitachi Fet TO-3P N-Ch |
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