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参数资料
| 型号： | 2SK1667-E |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 250 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 80K |
| 代理商： | 2SK1667-E |
2SK1667
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature Tc (
°C)
Static
Drain
to
Source
On
State
Resistance
R
DS(on)
(
)
– 40
0
40
80
120
160
0
0.4
0.8
1.2
1.6
2.0
5 A
2 A
Pulse Test
VGS = 10 V
ID = 10 A
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
|y
fs
|(S)
0.1
0.2
0.5
1
2
510
0.5
1
2
5
10
20
50
Pulse Test
VDS = 10 V
Tc = 75
°C
25
°C
–25
°C
Forward Transfer Admittance
vs. Drain Current
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
0.2
0.5
1
2
5
10
20
5
10
20
50
100
200
500
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
Body to Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
010
20
30
40
50
1
10
100
1000
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
Typical Capacitance vs. Drain
Source Voltage
Gate Charge Qg (nc)
08
500
Drain
to
Source
Voltage
V
DS
(V)
0
4
8
12
16
20
100 V
50 V
ID = 7 A
VGS
VDD = 50 V
VDD = 200 V
VDS
200 V
Gate
to
Source
Voltage
V
GS
(V)
400
300
200
100
16
24
32
40
Dynamic Input Characteristics
Drain Current ID (A)
Switching
Time
t
(ns)
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
VGS = 10 V, VDD = 30 V
PW = 2
s, duty ≤ 1 %
td (off)
tf
tr
td (on)
5
Switching Characteristics
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