参数资料
型号: 2SK1690SMP-FD
元件分类: JFETs
英文描述: 3 A, 450 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SMP-FD, 3 PIN
文件页数: 1/4页
文件大小: 63K
代理商: 2SK1690SMP-FD
2SK1690
No.4223-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
450
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
3A
Drain Current (Pulse)
IDP
12
A
Allowable Power Dissipation
PD
1.65
W
Tc=25°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
450
V
Zero-Gate Voltage Drain Current
IDSS
VDS=450V, VGS=0V
1.0
mA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
3.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1.5A
1.1
2.2
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1.5A, VGS=10V
2.0
2.6
Ω
Input Capacitance
Ciss
VDS=20V, f=1MHz
400
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
60
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
25
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
20
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
80
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Diode Forward Voltage
VSD
IS=3A, VGS=0V
1.8
V
(Note) Be careful in handling the 2SK1690 because it has no protection diode between gate and source.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN4223B
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
72006QB MS IM TC-00000046 / 61599TH (KT) / 70193TH (KOTO) BX-0293
SANYO Semiconductors
DATA SHEET
2SK1690
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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