参数资料
型号: 2SK1739A
元件分类: 功率晶体管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: 2-22C2A, 4 PIN
文件页数: 1/4页
文件大小: 119K
代理商: 2SK1739A
2SK1739A
2001-01-31 1/4
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1739A
RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
l Output Power
: Po ≥ 90 W (Min.)
l Drain Efficiency
: ηD = 50% (Typ.)
l Frequency
: f = 770 MHz
l PushPull Structure Package
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
ID
11
A
Reverse Drain Current
IDR
11
A
Drain Power Dissipation
PD
250
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
55~150
°C
JEDEC
EIAJ
TOSHIBA
222C2A
Weight: 17.5 g
Unit in mm
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EAA1
相关PDF资料
PDF描述
2SK1793-Z 3 A, 900 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
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2SK1806 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
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