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参数资料
| 型号： | 2SK1740-4 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 75 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | CP, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 37K |
| 代理商： | 2SK1740-4 |
2SK1740
No.4112-1/5
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN4112A
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
O1806GB SY IM AX-7275 / 62199TH (KT) / N1593TH (KOTO) 8-7275
SANYO Semiconductors
DATA SHEET
2SK1740
N-Channel Junction Silicon FET
HF Amplifiers Low-Frequency Amplifiers
Analog Switches
Features
Adoption of FBET process.
Large
yfs.
Small Ciss
Small-sized package permitting 2SK1740-applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
40
V
Gate-to-Drain Voltage
VGDS
--40
V
Gate Current
IG
10
mA
Drain Current
ID
75
mA
Allowable Power Dissipation
PD
250
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10A, VDS=0V
--40
V
Gate-to-Source Leakage Current
IGSS
VGS=--20V, VDS=0V
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
--2.0
--3.0
--5.0
V
Drain Current
IDSS
VDS=10V, VGS=0V
40*
75*
mA
Forward Transfer Admittance
yfs1VDS=10V, ID=10mA, f=1kHz
10
15
mS
yfs2VDS=10V, VGS=0V, f=1kHz
22
30
mS
Input Capacitance
Ciss
VDS=10V, VGS=0V, f=1MHz
11
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1MHz
2.5
pF
Noise Figure
NF
VDS=10V, Rg=1k, ID=1mA, f=1kHz
1.5
dB
Static Drain-to-Source On-State Resistance
RDS(on)
ID=10mA, VGS=0V
30
Marking : IJ
* : Pulse Test Pulse Width
≤2ms.
* : The 2SK1740 is classified by IDSS as follows : (unit : mA).
Rank
3
4
5
IDSS
40 to 52
48 to 63
57 to 75
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1740-4-TB-E | 制造商:SANYO 功能描述:^VRdgWX^ CP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR JFET N CH 40V SOT23 制造商:Sanyo 功能描述:0 |
| 2SK1740-5-TB-E | 制造商:SANYO 功能描述:^VRdgWX^ CP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR JFET N CH 40V SOT23 制造商:Sanyo 功能描述:0 |
| 2SK1753 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK176 | 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Ch 200V 8A High Speed TO-3 |
| 2SK1762-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 250V 12A 3-Pin(3+Tab) TO-220FM Box Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,250V,12A,0.23ohm,TO220FM 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 12A 3-Pin(3+Tab) TO-220FM Box |
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