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参数资料
| 型号： | 2SK1775 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PFM, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 48K |
| 代理商： | 2SK1775 |
2SK1775
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
900
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 720 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
1.2
1.6
I
D = 4 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
3.5
5.5
—
S
I
D = 4 A
V
DS = 20 V*
1
Input capacitance
Ciss
—
1730
—
pF
V
DS = 10 V
Output capacitance
Coss
—
700
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
310
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
25
—
ns
I
D = 4 A
Rise time
t
r
—
135
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
185
—
ns
R
L = 7.5
Fall time
t
f
—
130
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
900
—
ns
I
F = 8 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristic curves of 2SK1342
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1775-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 8A TO-3P |
| 2SK177T1 | 制造商:NEC 功能描述:New |
| 2SK1807-E | 制造商:Renesas Electronics Corporation 功能描述:900V NCHANEL MOSFET |
| 2SK1808(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FM |
| 2SK1808-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FM Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,900V,4A,3.0ohm,TO220FM 制造商:Renesas 功能描述:Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FM |
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