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参数资料
| 型号： | 2SK1807-E |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 95K |
| 代理商： | 2SK1807-E |
2SK1807
Rev.2.00 Sep 07, 2005 page 4 of 6
10
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
8
2
080
120
0
4
6
Static Drain to Source on State
Resistance vs. Temperature
ID = 5 A
VGS = 10 V
Pulse Test
1 A
–40
2 A
10
0.2
5
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
5
0.5
0.1
0.5
2
0.1
1
2
Forward Transfer Admittance
vs. Drain Current
Tc = 25
°C
VDS = 20 V
Pulse Test
0.05
0.2
1
–25
°C
75
°C
5,000
0.5
10
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
2,000
200
0.2
1
5
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
0.1
100
2
10,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
1,000
100
10
30
40
10
Typical Capacitance vs.
Drain to Source Voltage
0
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
1,000
40
100
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
800
200
20
60
80
0
400
600
VDS
400 V
16
4
0
8
12
VDD = 250 V
400 V
600 V
ID = 5 A
600 V
VDD = 250 V
VGS
Gate
to
Source
Voltage
V
GS
(V)
20
500
0.5
10
Drain Current ID (A)
Switching
Time
t
(ns)
200
20
0.2
1
5
50
100
0.1
10
2
Switching Characteristics
tf
td (on)
tr
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
td (off)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1808(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FM |
| 2SK1808-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FM Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,900V,4A,3.0ohm,TO220FM 制造商:Renesas 功能描述:Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220FM |
| 2SK1818-MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK1819-01MRSC | 制造商:Fuji Electric 功能描述: |
| 2SK1824-T1-A | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 8 SC75 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R |
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