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参数资料
| 型号： | 2SK1836 |
| 元件分类： | JFETs |
| 英文描述： | 0.1 ohm, POWER, FET |
| 封装： | TO-3PL, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 47K |
| 代理商： | 2SK1836 |
2SK1836, 2SK1837
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
K1836
V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown
voltage
K1837
500
—
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate
K1836
I
DSS
—
250
AV
DS = 360 V, VGS = 0
voltage drain
current
K1837
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to
K1836
R
DS(on)
—
0.08
0.10
I
D = 25 A
source on state
resistance
K1837
—
0.085
0.11
V
GS= 10 V*
1
Forward transfer admittance
|y
fs|22
35
—
S
I
D = 25 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
8150
—
pF
V
DS = 10 V
Output capacitance
Coss
—
2100
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
180
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
80
—
ns
I
D = 25 A
Rise time
t
r
—
250
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
550
—
ns
R
L = 1.2
Fall time
t
f
—
220
—
ns
Body to drain diode forward
voltage
V
DF
—
1.1
—
V
I
F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
620
—
ns
I
F = 50 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1837(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1838STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 1A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SK1839-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 30V 0.1A SOT323 |
| 2SK184-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin Mini |
| 2SK184-GRTPE4 | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE AUDIO AMPLIFIER - Tape and Reel |
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