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参数资料
| 型号： | 2SK184 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-4E1C, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 164K |
| 代理商： | 2SK184 |
2SK184
2003-03-25
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK184
Low Noise Audio Amplifier Applications
High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14.0
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
NF (1)
VDS = 10 V, RG = 1 kW, ID = 0.5 mA,
f
= 10 Hz
5
10
Noise figure
NF (2)
VDS = 10 V, RG = 1 kW, ID = 0.5 mA,
f
= 1 kHz
1
2
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK184-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin Mini |
| 2SK184-GRTPE4 | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE AUDIO AMPLIFIER - Tape and Reel |
| 2SK184-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1851-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1852(T-AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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