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参数资料
| 型号： | 2SK1862 |
| 元件分类： | JFETs |
| 英文描述： | 2.8 ohm, POWER, FET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 32K |
| 代理商： | 2SK1862 |
2SK1862, 2SK1863
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1862
V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown
voltage
2SK1863
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate
2SK1862
I
DSS
—
250
AV
DS = 360 V, VGS = 0
voltage drain
current
2SK1863
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to
2SK1862
R
DS(on)
—
2.0
2.8
I
D = 2 A, VGS = 10 V*
1
source on state
resistance
2SK1863
—
2.2
3.0
Forward transfer admittance
|y
fs|
1.5
2.5
—
S
I
D = 2 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
330
—
pF
V
DS = 10 V
Output capacitance
Coss
—
90
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
15
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—7
—ns
I
D = 2 A
Rise time
t
r
—
20
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
30
—
ns
R
L = 15
Fall time
t
f
—20—ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
300
—
ns
I
F = 3 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristic curves of 2SK1153, 2SK1154
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1875 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1875-TE85L | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1875-V(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1875VTE85L | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA 3-Pin USM T/R 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA Si 3-Pin USM T/R |
| 2SK1875VTE85LF | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA 3-Pin USM T/R 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA Si 3-Pin USM T/R |
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