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参数资料
| 型号： | 2SK1875-V |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 32 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封装： | 2-2E1B, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 533K |
| 代理商： | 2SK1875-V |
2SK1875
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK1875
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
High |Yfs|: |Yfs| = 25 mS (typ.)
Low Ciss: Ciss = 7.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
20
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 15 V, VDS = 0 V
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0 V, IG = 100 μA
20
V
Drain current
IDSS
(Note)
VDS = 5 V, VGS = 0 V
6
32
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 5 V, ID = 1 μA
2.5
V
Forward transfer admittance
Yfs
VDS = 5 V, VGS = 0 V, f = 1 kHz
15
25
mS
Input capacitance
Ciss
VDS = 5 V, VGS = 0 V, f = 1 MHz
7.5
10
pF
Reverse transfer capacitance
Crss
VDG = 5 V, ID = 0 A, f = 1 MHz
2
3
pF
Note: IDSS classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G)
(L)
(V)
( ) ...... IDSS rank marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1880L-E | 1.5 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1880STL-E | 1.5 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1880S | 1.5 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1875-V(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1875VTE85L | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA 3-Pin USM T/R 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA Si 3-Pin USM T/R |
| 2SK1875VTE85LF | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA 3-Pin USM T/R 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 32mA Si 3-Pin USM T/R |
| 2SK1875-VTE85LF | 制造商:Toshiba America Electronic Components 功能描述:FIELD EFFECT TRANSISTOR (PIECE) |
| 2SK1880S(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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