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参数资料
| 型号： | 2SK1891FD |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 35A条（丁）|对263AB |
| 文件页数： | 3/6页 |
| 文件大小： | 32K |
| 代理商： | 2SK1891FD |
2SK1831, 2SK1832
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source
K1831
V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown
voltage
K1832
500
—
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate
K1831
I
DSS
—
250
AV
DS = 360 V, VGS = 0
voltage drain
current
K1832
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to
K1831
R
DS(on)
—
0.6
0.8
I
D = 5 A
source on state
resistance
K1832
—
0.7
0.9
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
4.0
7.0
—
S
I
D = 5 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1050
—
pF
V
DS = 10 V
Output capacitance
Coss
—
280
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
40
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 5 A
Rise time
t
r
—
60
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
90
—
ns
R
L = 6
Fall time
t
f
—45—ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
350
—
ns
I
F = 10 A, VGS = 0,
di
F / dt = 100 A / s
Notes
1. Pulse Test
See characteristic curves of 2SK1157, 2SK1158
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