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参数资料
| 型号： | 2SK1900SMP-FD |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP-FD, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 61K |
| 代理商： | 2SK1900SMP-FD |
2SK1900
No.4210-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable
package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
30
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
120
A
Allowable Power Dissipation
PD
1.65
W
Tc=25C
70
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Symbol
Ratings
Parameter
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Gate-to-Source Breakdown Voltage
V(BR)GSS
IG= ±100μA, VDS=0V
±20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS= ±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=15A
16
27
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=15A, VGS=10V
30
40
mΩ
RDS(on)2
ID=15A, VGS=4V
40
55
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
1900
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
500
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
100
pF
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN4210A
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
D0606QA TI IM TC-00000356 / 62199 TH (KT) / 51193 TH (KOTO) AX-8377
SANYO Semiconductors
DATA SHEET
2SK1900
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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