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参数资料
| 型号： | 2SK1930 |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 代理商： | 2SK1930 |
2SK1930
2006-06-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSII.5)
2SK1930
Chopper Regulator, DCDC Converter, and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 3.0 (typ.)
High forward transfer admittance
: |Yfs| = 2.0 S (typ.)
Low leakage current : IDSS = 300 A (max) (VDS = 800 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
1000
V
Draingate voltage (RGS = 20 k)
VDGR
1000
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
4
Drain current
Pulse (Note 1)
IDP
12
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch–c)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch–a)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1930(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 1KV 4A 3-Pin (3+Tab) TO-220FL/SM 制造商:Toshiba 功能描述:Trans MOSFET N-CH 1KV 4A 3-Pin (3+Tab) TO-220FL/SM Cut Tape |
| 2SK1930(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 1000V 4A TO220SM |
| 2SK1930-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1931-7101 | 制造商:Shindengen Electric Mfg 功能描述:Cut Tape |
| 2SK1933(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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