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参数资料
| 型号： | 2SK1954 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | MP-3, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 2125K |
| 代理商： | 2SK1954 |
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MOS FIELD EFFECT TRANSISTOR
2SK1954,1954-Z
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
1993, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Document No. D17445EJ4V0DS00 (4th edition)
Date Published January 2007 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK1954 is N-channel MOS Field Effect Transistor designed for high
voltage switching applications.
FEATURES
Low On-state Resistance
RDS(on) = 0.65
Ω MAX. (VGS = 10 V, ID = 2.0 A)
Low Ciss: Ciss = 300 pF TYP.
Built-in G-S Gate Protection Diode
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSS
180
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±4.0
A
Drain Current (pulse)
Note 1
ID(pulse)
±16
A
Total Power Dissipation (TC = 25
°C)
PT1
20
W
Total Power Dissipation (TA = 25
°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note 2
IAS
4.0
A
Single Avalanche Energy
Note 2
EAS
44.3
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, RG = 25 Ω, VGS = 20 → 0 V
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWINGS (Unit: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
<R>
TO-252 (MP-3Z)
Electrode Connection
1. Gate
2. Drain
3. Source
4. Drain Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
TO-251 (MP-3)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1958-T1-A | 100 mA, 16 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1959-AZ | 2 A, 16 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK195 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK195H | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK195J | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1954-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1954-Z-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1954-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Nch 180V 4A 650m@10V TO252 Cut Tape |
| 2SK1957(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1958 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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