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参数资料
| 型号： | 2SK1986-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 4 A, 1000 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 214K |
| 代理商： | 2SK1986-01 |
N-channel MOS-FET
1000V
3,6
> Characteristics
2SK1986-01
FAP-IIA Series
4A
80W
Typical Output Characteristics
Drain-Source-On-State Resistance vs. T
ch
Typical Transfer Characteristics
↑
I
D
1
↑
R
D
]
2
↑
I
D
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source-On-State-Resistance vs. I
D
Typical Forward Transconductance vs. I
D
Gate Threshold Voltage vs. T
ch
↑
R
D
]
4
↑
g
f
5
↑
V
G
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitance vs. V
DS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C
7
↑
V
D
8
↑
V
G
↑
I
F
9
V
DS
[V]
→
Q
g
[nC]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
Safe operation area
↑
Z
t
Transient Thermal impedance
11
↑
P
D
10
↑
I
D
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK1986 | N-channel MOS-FET |
| 2SK2000 | Power MOSFET |
| 2SK2000-R | Power MOSFET |
| 2SK2002-01MR | N-channel MOS-FET |
| 2SK2003-01MR | N-channel MOS-FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ２ＳＫ１９-GR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK19-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 2SK192A-Y |
| 2SK2000 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Power MOSFET |
| 2SK2000-R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Power MOSFET |
| 2SK2001-01M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-220 |
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