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参数资料
| 型号： | 2SK1999 |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF POWER, FET |
| 封装： | RFPAK-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 43K |
| 代理商： | 2SK1999 |
2SK1999
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
120
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
12
A
Channel dissipation
Pch*
1
180
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage*
1
V
(BR)DSS
120
—
V
I
D = 1 mA, VGS = 0
Gate to source breakdown
voltage*
1
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Zero gate voltage drain current*
1
I
DSS
—
0.5
mA
V
DS = 100 V, VGS = 0
Gate to source cutoff voltage*
1
V
GS(off)
0.5
—
2.0
V
I
D = 1 mA, VDS = 10 V
Drain to source cutoff voltage*
1
V
DS(on)
—
2.7
3.5
V
I
D = 3 A, VGS = 10 V*
2
Forward transfer admittance*
1
|y
fs|
1.5
1.8
—
S
I
D = 2.5 A, VDS = 10 V*
2
Input capacitance*
1
Ciss
—
185
—
pF
V
GS = 5 V, VDS = 0
f = 1 MHz
Output capacitance*
1
Coss
—
60
—
pF
V
DS = 50 V, VGS = 0
f = 1 MHz
Output Power
Po
150
180
—
W
V
DS = 60 V, IDQ = 0.2 A
Drain Efficiency
ηD
—
65
—
%
f = 200 MHz, Pin = 5 W
Notes: 1. Shows / unit FET
2. Pulse Test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2008 | 20 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2009TE85R | 200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2SK2010 | 4 A, 250 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2011 | 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SK2014 | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ２ＳＫ１９-GR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK19-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 2SK192A-Y |
| 2SK2000 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Power MOSFET |
| 2SK2000-R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Power MOSFET |
| 2SK2001-01M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-220 |
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