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参数资料
| 型号： | 2SK2013-Y |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 264K |
| 代理商： | 2SK2013-Y |
2SK2013
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2013
Audio Frequency Power Amplifier Application
High breakdown voltage
: VDSS = 180V
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Complementary to 2SJ313
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 2)
ID
1
A
Drain power dissipation (Tc = 25°C)
PD
25
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
—
±100
nA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
—
V
Gatesource cutoff voltage (Note 3)
VGS (OFF)
VDS = 10 V, ID = 10 mA
1.8
—
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 0.6 A, VGS = 10 V
—
1.7
3.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.3 A
—
0.7
—
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
—
170
—
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
—
45
—
Reverse transfer capacitance
Crss
VDD ≈ 10 V, VGS = 0, f = 1 MHz
—
17
—
pF
Note 2: Ensure that the channel temperature does not exceed 150°C.
Note 3: VGS (OFF) Classification
O: 0.8~1.6,
Y: 1.4~2.8
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note 1: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product. The
RoHS is the Directive 2002/95/EC of the European Parliament and of the
Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Lot No.
Note 1
K2013
Part No.
(or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2013-Y(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2015 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2018 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2018-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2018-01L | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-channel MOS-FET |
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