参数资料
型号: 2SK2053
元件分类: JFETs
英文描述: 5 A, 16 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: SC-84, MP-2, 3 PIN
文件页数: 1/5页
文件大小: 122K
代理商: 2SK2053
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MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOSFET
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D11224EJ3V0DS00 (3rd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
1996
DESCRIPTION
The 2SK2053 is an N-channel vertical MOS FET. Because it
can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
New package intermediate between small signal and power
types
Gate can be driven by 1.5 V
Low ON resistance
RDS(on) = 0.40
Ω MAX. (VGS = 1.5 V, ID = 0.5 A)
RDS(on) = 0.12
Ω MAX. (VGS = 4.0 V, ID = 2.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2053
SC-84 (MP-2)
Marking: NA1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)
Note1
ID(pulse)
±10.0
A
Total Power Dissipation
Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic substrate of 7.5 cm
2 x 0.7 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.0 ±0.2
5.7 ±0.1
3.65
±0.1
1.0 0.5 ±0.1
0.55
2.1
4.2
0.5 ±0.1
0.85
±0.1
123
5.4
±0.25
1.5 ±0.1
0.4 ±0.05
1. Source
2. Drain
3. Gate
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料
PDF描述
2SK2054-AZ 3 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2054-AZ 3 A, 60 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2055-AZ 2 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2055-AZ 2 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2059S 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SK2053-T1 制造商:Renesas Electronics Corporation 功能描述:
2SK2053-T1-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 16V 5A 4-Pin(3+Tab) SC-84 T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 5A 4-Pin(3+Tab) SC-84 T/R
2SK2054 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SK2054-T1-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 3A 3-Pin(3+Tab) MP-2 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,3.0A,0.18ohm,MP-2 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) MP-2 T/R
2SK2055 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING