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参数资料
| 型号： | 2SK2075 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 250 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 45K |
| 代理商： | 2SK2075 |
2SK2075
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.105
0.13
I
D = 10 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
9
14
—
S
I
D = 10 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
2400
—
pF
V
DS = 10 V
Output capacitance
Coss
—
970
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
145
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
30
—
ns
I
D = 10 A
Rise time
t
r
—
110
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
220
—
ns
R
L = 3
Fall time
t
f
—95—ns
Body to drain diode forward
voltage
V
DF
—
1.3
—
V
I
F = 20 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
330
—
ns
I
F = 20 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2076 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Impedance Converter Applications |
| 2SK2076-14 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 400UA I(DSS) | SOT-346 |
| 2SK2076-15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | SOT-346 |
| 2SK2077 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SK2077 |
| 2SK2078 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Field Effect Transistor Silicon N Channel MOS Type |
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