参数资料
型号: 2SK208
元件分类: 小信号晶体管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236
封装: 2-3F1B, SC-59, TO-236MOD, 3 PIN
文件页数: 1/4页
文件大小: 138K
代理商: 2SK208
2SK208
2003-03-27
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter and
Condenser Microphone Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz)
Small package.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.3
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.4
-5.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.2
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
8.2
pF
Reverse transfer capacitance
Crss
VGD = -10 V, ID = 0, f = 1 MHz
2.6
pF
Noise figure
NF
VDS = 15 V, VGS = 0
RG = 100 kW, f = 120 Hz
0.5
dB
Note: IDSS classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
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