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参数资料
| 型号： | 2SK2109 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 5/8页 |
| 文件大小： | 168K |
| 代理商： | 2SK2109 |
2SK2109
3
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
-
Derating
Factor
-
%
30
100
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
0
10
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ID
-
Drain
Current
-
A
0
1.0
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
0.5
1
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
0.001
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(ON)
-
Drain
to
Source
On-State
Resistance
-
0.01
1
ID - Drain Current - A
80
60
40
20
0
60
90
120
150
5
2
1
0.5
0.2
0.1
2
5
10
20
50
100
Single pulse
1 ms
DC
PW
=
100
ms
10
ms
0.8
0.6
0.4
0.2
0.4
0.8
1.2
1.6
2.0
10 V
3.0 V
4.5 V
4.0 V
3.5 V
2.5 V
VGS = 2.0 V
0.1
0.01
0.001
0.0001
1
1.5
2
2.5
3
VDS = 10 V
1
0.1
0.01
0.1
1
0.5
0
0.1
1
10
VGS = 4 V
TA = 75 C
25 C
–25 C
25 C
75 C
TA = –25 C
VDS = 10 V
TA = 75 C
25 C
–25 C
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| 2SK211-Y | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236 |
| 2SK2114-E | 5 A, 450 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2115 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2109-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2109-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK210BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 12MA I(DSS) | SC-59 |
| 2SK210-BL | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:FM Tuner Applications VHF Band Amplifier Applications |
| 2SK210GR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SC-59 |
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